MURTA400120
GeneSiC Semiconductor
Producto No:
MURTA400120
Fabricante:
Paquete:
Three Tower
Lote:
-
Ficha de datos:
Descripción:
DIODE GEN 1.2KV 200A 3 TOWER
Cantidad:
Entrega:
Pago:
En stock : Por favor investigación
Por favor envíe RFQ, responderemos inmediatamente.
Información del producto
Parámetro Info
Guía del usuario
| Speed | Standard Recovery >500ns, > 200mA (Io) |
| Mounting Type | Chassis Mount |
| Product Status | Active |
| Supplier Device Package | Three Tower |
| Current - Reverse Leakage @ Vr | 25 µA @ 1200 V |
| Series | - |
| Package / Case | Three Tower |
| Technology | Standard |
| Voltage - Forward (Vf) (Max) @ If | 2.6 V @ 200 A |
| Diode Configuration | 1 Pair Common Cathode |
| Mfr | GeneSiC Semiconductor |
| Voltage - DC Reverse (Vr) (Max) | 1200 V |
| Package | Bulk |
| Current - Average Rectified (Io) (per Diode) | 200A |
| Operating Temperature - Junction | -55°C ~ 150°C |
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15,000 ㎡Almacén en stock
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