MURT30010
detaildesc

MURT30010

GeneSiC Semiconductor

Producto No:

MURT30010

Paquete:

Three Tower

Lote:

-

Ficha de datos:

pdf

Descripción:

DIODE MODULE 100V 150A 3TOWER

Cantidad:

Entrega:

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Pago:

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Información del producto

Parámetro Info

Guía del usuario

Speed Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 100 ns
Mounting Type Chassis Mount
Product Status Active
Supplier Device Package Three Tower
Current - Reverse Leakage @ Vr 25 µA @ 50 V
Series -
Package / Case Three Tower
Technology Standard
Voltage - Forward (Vf) (Max) @ If 1.3 V @ 150 A
Diode Configuration 1 Pair Common Cathode
Mfr GeneSiC Semiconductor
Voltage - DC Reverse (Vr) (Max) 100 V
Package Bulk
Current - Average Rectified (Io) (per Diode) 150A
Operating Temperature - Junction -55°C ~ 150°C