MSCSM120HRM311AG
Microchip Technology
Producto No:
MSCSM120HRM311AG
Fabricante:
Paquete:
-
Lote:
-
Ficha de datos:
Descripción:
PM-MOSFET-SIC- SP1F
Cantidad:
Entrega:
Pago:
En stock : Por favor investigación
Por favor envíe RFQ, responderemos inmediatamente.
Información del producto
Parámetro Info
Guía del usuario
| Operating Temperature | -40°C ~ 175°C (TJ) |
| FET Feature | Silicon Carbide (SiC) |
| Configuration | 4 N-Channel (Three Level Inverter) |
| Input Capacitance (Ciss) (Max) @ Vds | 3020pF @ 1000V, 4500pF @ 700V |
| Gate Charge (Qg) (Max) @ Vgs | 232nC @ 20V, 215nC @ 20V |
| Mounting Type | Chassis Mount |
| Product Status | Active |
| Rds On (Max) @ Id, Vgs | 31mOhm @ 40A, 20V, 19mOhm @ 40A, 20V |
| Supplier Device Package | - |
| Vgs(th) (Max) @ Id | 2.8V @ 3mA, 2.4V @ 4mA |
| Drain to Source Voltage (Vdss) | 1200V (1.2kV), 700V |
| Series | - |
| Package / Case | Module |
| Technology | Silicon Carbide (SiC) |
| Power - Max | 395W (Tc), 365W (Tc) |
| Current - Continuous Drain (Id) @ 25°C | 89A (Tc), 124A (Tc) |
| Mfr | Microchip Technology |
| Package | Bulk |
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