IXTH1N200P3
detaildesc

IXTH1N200P3

IXYS

Producto No:

IXTH1N200P3

Fabricante:

IXYS

Paquete:

TO-247 (IXTH)

Lote:

-

Ficha de datos:

pdf

Descripción:

MOSFET N-CH 2000V 1A TO247

Cantidad:

Entrega:

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Pago:

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Información del producto

Parámetro Info

Guía del usuario

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 646 pF @ 25 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 23.5 nC @ 10 V
Mounting Type Through Hole
Product Status Active
Rds On (Max) @ Id, Vgs 40Ohm @ 500mA, 10V
Supplier Device Package TO-247 (IXTH)
Vgs(th) (Max) @ Id 4V @ 250µA
Drain to Source Voltage (Vdss) 2000 V
Series Polar P3™
Power Dissipation (Max) 125W (Tc)
Package / Case TO-247-3
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 1A (Tc)
Mfr IXYS
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tube
Base Product Number IXTH1