IRLW630ATM
detaildesc

IRLW630ATM

onsemi

Producto No:

IRLW630ATM

Fabricante:

onsemi

Paquete:

I2PAK (TO-262)

Lote:

-

Ficha de datos:

pdf

Descripción:

MOSFET N-CH 200V 9A I2PAK

Cantidad:

Entrega:

1.webp 4.webp 5.webp 2.webp 3.webp

Pago:

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Información del producto

Parámetro Info

Guía del usuario

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 755 pF @ 25 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 27 nC @ 5 V
Mounting Type Through Hole
Product Status Obsolete
Rds On (Max) @ Id, Vgs 400mOhm @ 4.5A, 5V
Supplier Device Package I2PAK (TO-262)
Vgs(th) (Max) @ Id 2V @ 250µA
Drain to Source Voltage (Vdss) 200 V
Series -
Power Dissipation (Max) 3.1W (Ta), 69W (Tc)
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 9A (Tc)
Mfr onsemi
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 5V
Package Tape & Reel (TR)
Base Product Number IRLW63