IRFD214PBF
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IRFD214PBF

Vishay Siliconix

Producto No:

IRFD214PBF

Fabricante:

Vishay Siliconix

Paquete:

4-HVMDIP

Lote:

-

Ficha de datos:

pdf

Descripción:

MOSFET N-CH 250V 450MA 4DIP

Cantidad:

Entrega:

1.webp 4.webp 5.webp 2.webp 3.webp

Pago:

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Información del producto

Parámetro Info

Guía del usuario

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 140 pF @ 25 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 8.2 nC @ 10 V
Mounting Type Through Hole
Product Status Active
Rds On (Max) @ Id, Vgs 2Ohm @ 270mA, 10V
Supplier Device Package 4-HVMDIP
Vgs(th) (Max) @ Id 4V @ 250µA
Drain to Source Voltage (Vdss) 250 V
Series -
Power Dissipation (Max) 1W (Ta)
Package / Case 4-DIP (0.300", 7.62mm)
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 450mA (Ta)
Mfr Vishay Siliconix
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tube
Base Product Number IRFD214