IPG20N06S3L-35
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IPG20N06S3L-35

Infineon Technologies

Producto No:

IPG20N06S3L-35

Paquete:

PG-TDSON-8-4

Lote:

-

Ficha de datos:

pdf

Descripción:

MOSFET 2N-CH 55V 20A TDSON-8

Cantidad:

Entrega:

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Pago:

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Información del producto

Parámetro Info

Guía del usuario

Operating Temperature -55°C ~ 175°C (TJ)
FET Feature Logic Level Gate
Configuration 2 N-Channel (Dual)
Input Capacitance (Ciss) (Max) @ Vds 1730pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 23nC @ 10V
Mounting Type Surface Mount
Product Status Obsolete
Rds On (Max) @ Id, Vgs 35mOhm @ 11A, 10V
Supplier Device Package PG-TDSON-8-4
Vgs(th) (Max) @ Id 2.2V @ 15µA
Drain to Source Voltage (Vdss) 55V
Series OptiMOS™
Package / Case 8-PowerVDFN
Technology MOSFET (Metal Oxide)
Power - Max 30W
Current - Continuous Drain (Id) @ 25°C 20A
Mfr Infineon Technologies
Package Tape & Reel (TR)
Base Product Number IPG20N