IPD60R800CEATMA1
Infineon Technologies
Producto No:
IPD60R800CEATMA1
Fabricante:
Paquete:
PG-TO252-3
Lote:
-
Ficha de datos:
Descripción:
MOSFET N-CH 600V 5.6A TO252-3
Cantidad:
Entrega:
Pago:
En stock : Por favor investigación
Por favor envíe RFQ, responderemos inmediatamente.
Información del producto
Parámetro Info
Guía del usuario
| Operating Temperature | -40°C ~ 150°C (TJ) |
| FET Feature | - |
| Input Capacitance (Ciss) (Max) @ Vds | 373 pF @ 100 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 17.2 nC @ 10 V |
| Mounting Type | Surface Mount |
| Product Status | Obsolete |
| Rds On (Max) @ Id, Vgs | 800mOhm @ 2A, 10V |
| Supplier Device Package | PG-TO252-3 |
| Vgs(th) (Max) @ Id | 3.5V @ 170µA |
| Drain to Source Voltage (Vdss) | 600 V |
| Series | CoolMOS™ CE |
| Power Dissipation (Max) | 48W (Tc) |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Technology | MOSFET (Metal Oxide) |
| Current - Continuous Drain (Id) @ 25°C | 5.6A (Tc) |
| Mfr | Infineon Technologies |
| Vgs (Max) | ±20V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Package | Tape & Reel (TR) |
| Base Product Number | IPD60R |
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