IDH10G65C5ZXKSA1
Infineon Technologies
Producto No:
IDH10G65C5ZXKSA1
Fabricante:
Paquete:
PG-TO220-2
Lote:
-
Ficha de datos:
Descripción:
DIODE SIL CARB 650V 10A TO220-2
Cantidad:
Entrega:
Pago:
En stock : Por favor investigación
Por favor envíe RFQ, responderemos inmediatamente.
Información del producto
Parámetro Info
Guía del usuario
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Capacitance @ Vr, F | 300pF @ 1V, 1MHz |
| Mounting Type | Through Hole |
| Product Status | Discontinued at Digi-Key |
| Supplier Device Package | PG-TO220-2 |
| Current - Reverse Leakage @ Vr | 180 µA @ 650 V |
| Series | CoolSiC™+ |
| Package / Case | TO-220-2 |
| Technology | SiC (Silicon Carbide) Schottky |
| Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 10 A |
| Mfr | Infineon Technologies |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Package | Tube |
| Current - Average Rectified (Io) | 10A |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Base Product Number | IDH10G65 |
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