IDC08S120EX7SA1
Infineon Technologies
Producto No:
IDC08S120EX7SA1
Fabricante:
Paquete:
Sawn on foil
Lote:
-
Ficha de datos:
Descripción:
DIODE SIL CARB 1.2KV 7.5A WAFER
Cantidad:
Entrega:
Pago:
En stock : Por favor investigación
Por favor envíe RFQ, responderemos inmediatamente.
Información del producto
Parámetro Info
Guía del usuario
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Capacitance @ Vr, F | 380pF @ 1V, 1MHz |
| Mounting Type | Surface Mount |
| Product Status | Obsolete |
| Supplier Device Package | Sawn on foil |
| Current - Reverse Leakage @ Vr | 180 µA @ 1200 V |
| Series | CoolSiC™+ |
| Package / Case | Die |
| Technology | SiC (Silicon Carbide) Schottky |
| Voltage - Forward (Vf) (Max) @ If | 1.8 V @ 7.5 A |
| Mfr | Infineon Technologies |
| Voltage - DC Reverse (Vr) (Max) | 1200 V |
| Package | Bulk |
| Current - Average Rectified (Io) | 7.5A |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Base Product Number | IDC08S120 |
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