
Infineon Technologies
Producto No:
IDC04S60CEX1SA1
Fabricante:
Paquete:
Die
Lote:
-
Descripción:
DIODE SIL CARBIDE 600V 4A DIE
Cantidad:
Entrega:

Pago:
Por favor envíe RFQ, responderemos inmediatamente.

| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Capacitance @ Vr, F | 130pF @ 1V, 1MHz |
| Mounting Type | Surface Mount |
| Product Status | Obsolete |
| Supplier Device Package | Die |
| Current - Reverse Leakage @ Vr | 50 µA @ 600 V |
| Series | CoolSiC™+ |
| Package / Case | Die |
| Technology | SiC (Silicon Carbide) Schottky |
| Voltage - Forward (Vf) (Max) @ If | 1.9 V @ 4 A |
| Mfr | Infineon Technologies |
| Voltage - DC Reverse (Vr) (Max) | 600 V |
| Package | Bulk |
| Current - Average Rectified (Io) | 4A |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Base Product Number | IDC04S60 |