Hogar / Single Diodes / IDC04S60CEX1SA1
IDC04S60CEX1SA1
detaildesc

IDC04S60CEX1SA1

Infineon Technologies

Producto No:

IDC04S60CEX1SA1

Paquete:

Die

Lote:

-

Ficha de datos:

pdf

Descripción:

DIODE SIL CARBIDE 600V 4A DIE

Cantidad:

Entrega:

1.webp 4.webp 5.webp 2.webp 3.webp

Pago:

paypal.webp paypal02.webp paypal03.webp paypal04.webp

En stock : Por favor investigación

Por favor envíe RFQ, responderemos inmediatamente.

Certif02 Certif07 Certif03 Certif04 Certif08 Certif10 Certif09 Certif05 Certif06

Información del producto

Parámetro Info

Guía del usuario

Speed No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) 0 ns
Capacitance @ Vr, F 130pF @ 1V, 1MHz
Mounting Type Surface Mount
Product Status Obsolete
Supplier Device Package Die
Current - Reverse Leakage @ Vr 50 µA @ 600 V
Series CoolSiC™+
Package / Case Die
Technology SiC (Silicon Carbide) Schottky
Voltage - Forward (Vf) (Max) @ If 1.9 V @ 4 A
Mfr Infineon Technologies
Voltage - DC Reverse (Vr) (Max) 600 V
Package Bulk
Current - Average Rectified (Io) 4A
Operating Temperature - Junction -55°C ~ 175°C
Base Product Number IDC04S60