HUFA76609D3
detaildesc

HUFA76609D3

onsemi

Producto No:

HUFA76609D3

Fabricante:

onsemi

Paquete:

I-PAK

Lote:

-

Ficha de datos:

pdf

Descripción:

MOSFET N-CH 100V 10A IPAK

Cantidad:

Entrega:

1.webp 4.webp 5.webp 2.webp 3.webp

Pago:

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Información del producto

Parámetro Info

Guía del usuario

Operating Temperature -55°C ~ 175°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 425 pF @ 25 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 16 nC @ 10 V
Mounting Type Through Hole
Product Status Obsolete
Rds On (Max) @ Id, Vgs 160mOhm @ 10A, 10V
Supplier Device Package I-PAK
Vgs(th) (Max) @ Id 3V @ 250µA
Drain to Source Voltage (Vdss) 100 V
Series UltraFET™
Power Dissipation (Max) 49W (Tc)
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 10A (Tc)
Mfr onsemi
Vgs (Max) ±16V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Package Tube
Base Product Number HUFA76