HP8ME5TB1
detaildesc

HP8ME5TB1

Rohm Semiconductor

Producto No:

HP8ME5TB1

Fabricante:

Rohm Semiconductor

Paquete:

8-HSOP

Lote:

-

Ficha de datos:

pdf

Descripción:

100V 8.5A, DUAL NCH+PCH, HSOP8,

Cantidad:

Entrega:

1.webp 4.webp 5.webp 2.webp 3.webp

Pago:

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Información del producto

Parámetro Info

Guía del usuario

Operating Temperature 150°C (TJ)
FET Feature Standard
Configuration N and P-Channel
Input Capacitance (Ciss) (Max) @ Vds 90pF @ 50V, 590pF @ 50V
Gate Charge (Qg) (Max) @ Vgs 2.9nC @ 10V, 19.7nC @ 10V
Mounting Type Surface Mount
Product Status Active
Rds On (Max) @ Id, Vgs 193mOhm @ 3A, 10V, 273mOhm @ 3A, 10V
Supplier Device Package 8-HSOP
Vgs(th) (Max) @ Id 2.5V @ 1mA
Drain to Source Voltage (Vdss) 100V
Series -
Package / Case 8-PowerTDFN
Technology MOSFET (Metal Oxide)
Power - Max 3W (Ta), 20W (Tc)
Current - Continuous Drain (Id) @ 25°C 3A (Ta), 8.5A (Tc), 3A (Ta), 8A (Tc)
Mfr Rohm Semiconductor
Package Tape & Reel (TR)