GT060N04D52
detaildesc

GT060N04D52

Goford Semiconductor

Producto No:

GT060N04D52

Paquete:

8-DFN (4.9x5.75)

Lote:

-

Ficha de datos:

pdf

Descripción:

DUAL N40V,62A,RD<6.5M@10V,VTH1.0

Cantidad:

Entrega:

1.webp 4.webp 5.webp 2.webp 3.webp

Pago:

paypal.webp paypal02.webp paypal03.webp paypal04.webp

En stock : Por favor investigación

Por favor envíe RFQ, responderemos inmediatamente.

Certif02 Certif07 Certif03 Certif04 Certif08 Certif10 Certif09 Certif05 Certif06

Información del producto

Parámetro Info

Guía del usuario

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature Standard
Configuration 2 N-Channel
Input Capacitance (Ciss) (Max) @ Vds 1276pF @ 20V
Gate Charge (Qg) (Max) @ Vgs 44nC @ 10V
Mounting Type Surface Mount
Product Status Active
Rds On (Max) @ Id, Vgs 6.5mOhm @ 30A, 10V
Supplier Device Package 8-DFN (4.9x5.75)
Vgs(th) (Max) @ Id 2.3V @ 250µA
Drain to Source Voltage (Vdss) 40V
Series -
Package / Case 8-PowerTDFN
Technology MOSFET (Metal Oxide)
Power - Max 20W (Tc)
Current - Continuous Drain (Id) @ 25°C 62A (Tc)
Mfr Goford Semiconductor
Package Tape & Reel (TR)