Hogar / Diode Arrays / GHXS100B120S-D3
GHXS100B120S-D3
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GHXS100B120S-D3

SemiQ

Producto No:

GHXS100B120S-D3

Fabricante:

SemiQ

Paquete:

SOT-227

Lote:

-

Ficha de datos:

pdf

Descripción:

SIC SBD PARALLEL POWER MODULE 12

Cantidad:

Entrega:

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Pago:

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En stock : 15

Mínimo: 1 Múltiplos: 1

Qty

Precio unitario

Precio Ext

  • 1

    $74.499

    $74.499

  • 10

    $67.5184

    $675.184

  • 100

    $60.533905

    $6053.3905

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Información del producto

Parámetro Info

Guía del usuario

Speed No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) 0 ns
Mounting Type Chassis Mount
Product Status Active
Supplier Device Package SOT-227
Current - Reverse Leakage @ Vr 200 µA @ 1200 V
Series -
Package / Case SOT-227-4, miniBLOC
Technology SiC (Silicon Carbide) Schottky
Voltage - Forward (Vf) (Max) @ If 1.7 V @ 100 A
Diode Configuration 2 Independent
Mfr SemiQ
Voltage - DC Reverse (Vr) (Max) 1200 V
Package Tube
Current - Average Rectified (Io) (per Diode) 198A (DC)
Operating Temperature - Junction -55°C ~ 175°C
Base Product Number GHXS100