GD02MPS12E
GeneSiC Semiconductor
Producto No:
GD02MPS12E
Fabricante:
Paquete:
TO-252-2
Lote:
-
Ficha de datos:
Descripción:
DIODE SIL CARB 1.2KV 8A TO252-2
Cantidad:
Entrega:
Pago:
En stock : Por favor investigación
Por favor envíe RFQ, responderemos inmediatamente.
Información del producto
Parámetro Info
Guía del usuario
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Capacitance @ Vr, F | 73pF @ 1V, 1MHz |
| Mounting Type | Surface Mount |
| Product Status | Active |
| Supplier Device Package | TO-252-2 |
| Current - Reverse Leakage @ Vr | 5 µA @ 1200 V |
| Series | SiC Schottky MPS™ |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Technology | SiC (Silicon Carbide) Schottky |
| Voltage - Forward (Vf) (Max) @ If | 1.8 V @ 2 A |
| Mfr | GeneSiC Semiconductor |
| Voltage - DC Reverse (Vr) (Max) | 1200 V |
| Package | Tape & Reel (TR) |
| Current - Average Rectified (Io) | 8A |
| Operating Temperature - Junction | -55°C ~ 175°C |
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