GC05MPS12-220
detaildesc

GC05MPS12-220

GeneSiC Semiconductor

Producto No:

GC05MPS12-220

Paquete:

TO-220-2

Lote:

-

Ficha de datos:

pdf

Descripción:

DIODE SIL CARB 1.2KV 29A TO220-2

Cantidad:

Entrega:

1.webp 4.webp 5.webp 2.webp 3.webp

Pago:

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Información del producto

Parámetro Info

Guía del usuario

Speed No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) 0 ns
Capacitance @ Vr, F 359pF @ 1V, 1MHz
Mounting Type Through Hole
Product Status Obsolete
Supplier Device Package TO-220-2
Current - Reverse Leakage @ Vr 4 µA @ 1200 V
Series -
Package / Case TO-220-2
Technology SiC (Silicon Carbide) Schottky
Voltage - Forward (Vf) (Max) @ If 1.8 V @ 5 A
Mfr GeneSiC Semiconductor
Voltage - DC Reverse (Vr) (Max) 1200 V
Package Tube
Current - Average Rectified (Io) 29A
Operating Temperature - Junction -55°C ~ 175°C