G3R160MT17J
GeneSiC Semiconductor
Producto No:
G3R160MT17J
Fabricante:
Paquete:
TO-263-7
Lote:
-
Ficha de datos:
Descripción:
SIC MOSFET N-CH 22A TO263-7
Cantidad:
Entrega:
Pago:
En stock : Por favor investigación
Por favor envíe RFQ, responderemos inmediatamente.
Información del producto
Parámetro Info
Guía del usuario
| Operating Temperature | -55°C ~ 175°C (TJ) |
| FET Feature | - |
| Input Capacitance (Ciss) (Max) @ Vds | 1272 pF @ 1000 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 51 nC @ 15 V |
| Mounting Type | Surface Mount |
| Product Status | Active |
| Rds On (Max) @ Id, Vgs | 208mOhm @ 12A, 15V |
| Supplier Device Package | TO-263-7 |
| Vgs(th) (Max) @ Id | 2.7V @ 5mA |
| Drain to Source Voltage (Vdss) | 1700 V |
| Series | G3R™ |
| Power Dissipation (Max) | 187W (Tc) |
| Package / Case | TO-263-8, D²Pak (7 Leads + Tab), TO-263CA |
| Technology | SiCFET (Silicon Carbide) |
| Current - Continuous Drain (Id) @ 25°C | 22A (Tc) |
| Mfr | GeneSiC Semiconductor |
| Vgs (Max) | ±15V |
| Drive Voltage (Max Rds On, Min Rds On) | 15V |
| Package | Tube |
| Base Product Number | G3R160 |
Piezas recomendadas
G3R160MT17J Blog relacionado
Purchase must see! Electronic component selection from entry to give up
2024-10-24 2
Grundkenntnisse in Kristalloszillatoren, Schaltungsdesign, Ursachen für Vibrationsausfall, Schaltungsprinzipien, Kristallfrequenz und Anwendungen digitaler Schaltungen (Download von Kristalloszillatordaten)
2024-04-08 2
Order transfer! A 30-year old Hong Kong-owned PCB factory in Shenzhen was sold
2024-02-22 4
New product release | Daoheshun infrared methane sensor, guarding the "last pass" of gas safety
2024-02-22 2
2000+Volumen de RFQ promedio diario
30,000,000Unidad de producto estándar
2800+Fabricantes mundiales
15,000 ㎡Almacén en stock
Enlaces rápidos
CopyRight © 道合顺 2013 - 2022 粤ICP备18104022号 粤公网安备 44030402004525号