FQU1N80TU

onsemi

Producto No:

FQU1N80TU

Fabricante:

Paquete:

I-PAK

Lote:

Ficha de datos:

Descripción:

MOSFET N-CH 800V 1A IPAK

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En stock : 4772

Mínimo: 1 Múltiplos: 1

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	195 pF @ 25 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	7.2 nC @ 10 V
Mounting Type	Through Hole
Product Status	Obsolete
Rds On (Max) @ Id, Vgs	20Ohm @ 500mA, 10V
Supplier Device Package	I-PAK
Vgs(th) (Max) @ Id	5V @ 250µA
Drain to Source Voltage (Vdss)	800 V
Series	QFET®
Power Dissipation (Max)	2.5W (Ta), 45W (Tc)
Package / Case	TO-251-3 Short Leads, IPak, TO-251AA
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	1A (Tc)
Mfr	onsemi
Vgs (Max)	±30V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube
Base Product Number	FQU1N80