ES1JL MHG
Taiwan Semiconductor Corporation
Producto No:
ES1JL MHG
Fabricante:
Paquete:
Sub SMA
Lote:
-
Ficha de datos:
Descripción:
DIODE GEN PURP 600V 1A SUB SMA
Cantidad:
Entrega:
Pago:
En stock : Por favor investigación
Por favor envíe RFQ, responderemos inmediatamente.
Información del producto
Parámetro Info
Guía del usuario
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 35 ns |
| Capacitance @ Vr, F | 8pF @ 1V, 1MHz |
| Mounting Type | Surface Mount |
| Product Status | Active |
| Supplier Device Package | Sub SMA |
| Current - Reverse Leakage @ Vr | 5 µA @ 600 V |
| Series | - |
| Package / Case | DO-219AB |
| Technology | Standard |
| Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 1 A |
| Mfr | Taiwan Semiconductor Corporation |
| Voltage - DC Reverse (Vr) (Max) | 600 V |
| Package | Tape & Reel (TR) |
| Current - Average Rectified (Io) | 1A |
| Operating Temperature - Junction | -55°C ~ 150°C |
| Base Product Number | ES1J |
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2000+Volumen de RFQ promedio diario
30,000,000Unidad de producto estándar
2800+Fabricantes mundiales
15,000 ㎡Almacén en stock
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