DMT10H9M9SH3

Diodes Incorporated

Producto No:

DMT10H9M9SH3

Fabricante:

Paquete:

TO-251

Lote:

Ficha de datos:

Descripción:

MOSFET BVDSS: 61V~100V TO251 TUB

Cantidad:

Entrega:

Pago:

En stock : Por favor investigación

Por favor envíe RFQ, responderemos inmediatamente.

Nombre de contacto

Correo electrónico

Nombre de la empresa

País

Cantidad

Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	2085 pF @ 50 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	30 nC @ 10 V
Mounting Type	Through Hole
Product Status	Active
Rds On (Max) @ Id, Vgs	9mOhm @ 20A, 10V
Supplier Device Package	TO-251
Vgs(th) (Max) @ Id	4V @ 250µA
Drain to Source Voltage (Vdss)	100 V
Series	-
Power Dissipation (Max)	114W (Tc)
Package / Case	TO-251-3 Stub Leads, IPak
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	84A (Tc)
Mfr	Diodes Incorporated
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Package	Tube
Base Product Number	DMT10