DMN2029UVT-7
detaildesc

DMN2029UVT-7

Diodes Incorporated

Producto No:

DMN2029UVT-7

Paquete:

TSOT-26

Lote:

-

Ficha de datos:

pdf

Descripción:

MOSFET N-CH 6.8A TSOT26

Cantidad:

Entrega:

1.webp 4.webp 5.webp 2.webp 3.webp

Pago:

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Información del producto

Parámetro Info

Guía del usuario

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 646 pF @ 10 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 7.1 nC @ 4.5 V
Mounting Type Surface Mount
Product Status Active
Rds On (Max) @ Id, Vgs 24mOhm @ 6.2A, 4.5V
Supplier Device Package TSOT-26
Vgs(th) (Max) @ Id 1.5V @ 250µA
Drain to Source Voltage (Vdss) 20 V
Series -
Power Dissipation (Max) 700mW (Ta)
Package / Case SOT-23-6 Thin, TSOT-23-6
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 6.8A (Ta)
Mfr Diodes Incorporated
Vgs (Max) ±10V
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Package Tape & Reel (TR)
Base Product Number DMN2029