1N3595US/TR
detaildesc

1N3595US/TR

Microchip Technology

Producto No:

1N3595US/TR

Paquete:

B, SQ-MELF

Lote:

-

Ficha de datos:

pdf

Descripción:

DIODE GEN PURP 4A B SQ-MELF

Cantidad:

Entrega:

1.webp 4.webp 5.webp 2.webp 3.webp

Pago:

paypal.webp paypal02.webp paypal03.webp paypal04.webp

En stock : Por favor investigación

Por favor envíe RFQ, responderemos inmediatamente.

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Información del producto

Parámetro Info

Guía del usuario

Speed Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr) 3 µs
Capacitance @ Vr, F -
Mounting Type Surface Mount
Product Status Active
Supplier Device Package B, SQ-MELF
Current - Reverse Leakage @ Vr 1 nA @ 125 V
Series -
Package / Case SQ-MELF, B
Technology Standard
Voltage - Forward (Vf) (Max) @ If 1 V @ 200 mA
Mfr Microchip Technology
Package Tape & Reel (TR)
Current - Average Rectified (Io) 4A
Operating Temperature - Junction -65°C ~ 150°C