TSM1NB60CH C5G
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TSM1NB60CH C5G

Taiwan Semiconductor Corporation

Produkt-Nr.:

TSM1NB60CH C5G

Paket:

TO-251 (IPAK)

Charge:

-

Datenblatt:

pdf

Beschreibung:

MOSFET N-CHANNEL 600V 1A TO251

Menge:

Lieferung:

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Produkt informationen

Parameter-Info

Benutzer handbuch

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 138 pF @ 25 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 6.1 nC @ 10 V
Mounting Type Through Hole
Product Status Active
Rds On (Max) @ Id, Vgs 10Ohm @ 500mA, 10V
Supplier Device Package TO-251 (IPAK)
Vgs(th) (Max) @ Id 4.5V @ 250µA
Drain to Source Voltage (Vdss) 600 V
Series -
Power Dissipation (Max) 39W (Tc)
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 1A (Tc)
Mfr Taiwan Semiconductor Corporation
Vgs (Max) ±30V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tube
Base Product Number TSM1NB60