TPH3206LDG-TR
detaildesc

TPH3206LDG-TR

Transphorm

Produkt-Nr.:

TPH3206LDG-TR

Hersteller:

Transphorm

Paket:

3-PQFN (8x8)

Charge:

-

Datenblatt:

pdf

Beschreibung:

GANFET N-CH 600V 17A 3PQFN

Menge:

Lieferung:

1.webp 4.webp 5.webp 2.webp 3.webp

Zahlung:

paypal.webp paypal02.webp paypal03.webp paypal04.webp

Auf Lager : Bitte Anfrage

Bitte senden Sie RFQ, wir werden sofort antworten.

Certif02 Certif07 Certif03 Certif04 Certif08 Certif10 Certif09 Certif05 Certif06

Produkt informationen

Parameter-Info

Benutzer handbuch

Operating Temperature -55°C ~ 175°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 760 pF @ 480 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 9.3 nC @ 4.5 V
Mounting Type Surface Mount
Product Status Obsolete
Rds On (Max) @ Id, Vgs 180mOhm @ 11A, 8V
Supplier Device Package 3-PQFN (8x8)
Vgs(th) (Max) @ Id 2.6V @ 500µA
Drain to Source Voltage (Vdss) 600 V
Series -
Power Dissipation (Max) 96W (Tc)
Package / Case 3-PowerDFN
Technology GaNFET (Gallium Nitride)
Current - Continuous Drain (Id) @ 25°C 17A (Tc)
Mfr Transphorm
Vgs (Max) ±18V
Drive Voltage (Max Rds On, Min Rds On) 8V
Package Tray