SPP10N10L
Infineon Technologies
Produkt-Nr.:
SPP10N10L
Hersteller:
Paket:
PG-TO220-3-1
Charge:
-
Datenblatt:
Beschreibung:
MOSFET N-CH 100V 10.3A TO220-3
Menge:
Lieferung:
Zahlung:
Auf Lager : Bitte Anfrage
Bitte senden Sie RFQ, wir werden sofort antworten.
Produkt informationen
Parameter-Info
Benutzer handbuch
| Operating Temperature | -55°C ~ 175°C (TJ) |
| FET Feature | - |
| Input Capacitance (Ciss) (Max) @ Vds | 444 pF @ 25 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 22 nC @ 10 V |
| Mounting Type | Through Hole |
| Product Status | Obsolete |
| Rds On (Max) @ Id, Vgs | 154mOhm @ 8.1A, 10V |
| Supplier Device Package | PG-TO220-3-1 |
| Vgs(th) (Max) @ Id | 2V @ 21µA |
| Drain to Source Voltage (Vdss) | 100 V |
| Series | SIPMOS® |
| Power Dissipation (Max) | 50W (Tc) |
| Package / Case | TO-220-3 |
| Technology | MOSFET (Metal Oxide) |
| Current - Continuous Drain (Id) @ 25°C | 10.3A (Tc) |
| Mfr | Infineon Technologies |
| Vgs (Max) | ±20V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Package | Tube |
| Base Product Number | SPP10N |
Empfohlene Teile
SPP10N10L Verwandte Blog
Purchase must see! Electronic component selection from entry to give up
2024-10-24 2
Grundkenntnisse in Kristalloszillatoren, Schaltungsdesign, Ursachen für Vibrationsausfall, Schaltungsprinzipien, Kristallfrequenz und Anwendungen digitaler Schaltungen (Download von Kristalloszillatordaten)
2024-04-08 2
Order transfer! A 30-year old Hong Kong-owned PCB factory in Shenzhen was sold
2024-02-22 4
New product release | Daoheshun infrared methane sensor, guarding the "last pass" of gas safety
2024-02-22 2
2000+Tägliches durchschnitt liches RFQ-Volumen
30,000,000Standard produkt einheit
2800+Weltweit Hersteller
15,000 ㎡Lager auf Lager
Schnelle Links
CopyRight © 道合顺 2013 - 2022 粤ICP备18104022号 粤公网安备 44030402004525号