SIZ350DT-T1-GE3
detaildesc

SIZ350DT-T1-GE3

Vishay Siliconix

Produkt-Nr.:

SIZ350DT-T1-GE3

Hersteller:

Vishay Siliconix

Paket:

8-Power33 (3x3)

Charge:

-

Datenblatt:

pdf

Beschreibung:

MOSFET DUAL N-CHAN 30V POWERPAIR

Menge:

Lieferung:

1.webp 4.webp 5.webp 2.webp 3.webp

Zahlung:

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Auf Lager : 1629

Minimum: 1 Vielfache: 1

Menge

Stückpreis

Ext-Preis

  • 1

    $1.0355

    $1.0355

  • 10

    $0.84645

    $8.4645

  • 100

    $0.658255

    $65.8255

  • 500

    $0.557973

    $278.9865

  • 1000

    $0.454528

    $454.528

Nicht der Preis, den Sie wollen? Senden Sie jetzt RFQ und wir werden Sie so schnell wie möglich kontaktieren.

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Produkt informationen

Parameter-Info

Benutzer handbuch

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Configuration 2 N-Channel (Dual)
Input Capacitance (Ciss) (Max) @ Vds 940pF @ 15V
Gate Charge (Qg) (Max) @ Vgs 20.3nC @ 10V
Mounting Type Surface Mount
Product Status Active
Rds On (Max) @ Id, Vgs 6.75mOhm @ 15A, 10V
Supplier Device Package 8-Power33 (3x3)
Vgs(th) (Max) @ Id 2.4V @ 250µA
Drain to Source Voltage (Vdss) 30V
Series TrenchFET® Gen IV
Package / Case 8-PowerWDFN
Technology MOSFET (Metal Oxide)
Power - Max 3.7W (Ta), 16.7W (Tc)
Current - Continuous Drain (Id) @ 25°C 18.5A (Ta), 30A (Tc)
Mfr Vishay Siliconix
Package Tape & Reel (TR)
Base Product Number SIZ350