SI7445DP-T1-GE3
detaildesc

SI7445DP-T1-GE3

Vishay Siliconix

Produkt-Nr.:

SI7445DP-T1-GE3

Hersteller:

Vishay Siliconix

Paket:

PowerPAK® 1212-8

Charge:

-

Datenblatt:

pdf

Beschreibung:

MOSFET P-CH 20V 12A PPAK 1212-8

Menge:

Lieferung:

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Zahlung:

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Produkt informationen

Parameter-Info

Benutzer handbuch

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
FET Type P-Channel
Gate Charge (Qg) (Max) @ Vgs 140 nC @ 5 V
Mounting Type Surface Mount
Product Status Obsolete
Rds On (Max) @ Id, Vgs 7.7mOhm @ 19A, 4.5V
Supplier Device Package PowerPAK® 1212-8
Vgs(th) (Max) @ Id 1V @ 250µA
Drain to Source Voltage (Vdss) 20 V
Series TrenchFET®
Power Dissipation (Max) 1.9W (Ta)
Package / Case PowerPAK® 1212-8
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 12A (Ta)
Mfr Vishay Siliconix
Vgs (Max) ±8V
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Package Tape & Reel (TR)
Base Product Number SI7445