PMCM6501UNEZ
detaildesc

PMCM6501UNEZ

NXP Semiconductors

Produkt-Nr.:

PMCM6501UNEZ

Hersteller:

NXP Semiconductors

Paket:

6-WLCSP (1.48x0.98)

Charge:

-

Datenblatt:

pdf

Beschreibung:

PMCM6501UNE - 20V, N-CHANNEL TRE

Menge:

Lieferung:

1.webp 4.webp 5.webp 2.webp 3.webp

Zahlung:

paypal.webp paypal02.webp paypal03.webp paypal04.webp

Auf Lager : Bitte Anfrage

Bitte senden Sie RFQ, wir werden sofort antworten.

Certif02 Certif07 Certif03 Certif04 Certif08 Certif10 Certif09 Certif05 Certif06

Produkt informationen

Parameter-Info

Benutzer handbuch

Operating Temperature 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 105 pF @ 10 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 6.2 nC @ 4.5 V
Mounting Type Surface Mount
Product Status Active
Rds On (Max) @ Id, Vgs 21mOhm @ 3A, 4.5V
Supplier Device Package 6-WLCSP (1.48x0.98)
Vgs(th) (Max) @ Id 900mV @ 250µA
Drain to Source Voltage (Vdss) 20 V
Series -
Power Dissipation (Max) 400mW
Package / Case 6-XFBGA, WLCSP
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 8.7A (Ta)
Mfr NXP Semiconductors
Vgs (Max) ±8V
Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V
Package Bulk