IRFZ48L
detaildesc

IRFZ48L

Vishay Siliconix

Produkt-Nr.:

IRFZ48L

Hersteller:

Vishay Siliconix

Paket:

TO-262-3

Charge:

-

Datenblatt:

pdf

Beschreibung:

MOSFET N-CH 60V 50A TO262-3

Menge:

Lieferung:

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Zahlung:

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Produkt informationen

Parameter-Info

Benutzer handbuch

Operating Temperature -55°C ~ 175°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 2400 pF @ 25 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 110 nC @ 10 V
Mounting Type Through Hole
Product Status Active
Rds On (Max) @ Id, Vgs 18mOhm @ 43A, 10V
Supplier Device Package TO-262-3
Vgs(th) (Max) @ Id 4V @ 250µA
Drain to Source Voltage (Vdss) 60 V
Series -
Power Dissipation (Max) 3.7W (Ta), 190W (Tc)
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 50A (Tc)
Mfr Vishay Siliconix
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tube
Base Product Number IRFZ48