DMN1150UFB-7B
detaildesc

DMN1150UFB-7B

Diodes Incorporated

Produkt-Nr.:

DMN1150UFB-7B

Paket:

X1-DFN1006-3

Charge:

-

Datenblatt:

pdf

Beschreibung:

MOSFET N-CH 12V 1.41A 3DFN

Menge:

Lieferung:

1.webp 4.webp 5.webp 2.webp 3.webp

Zahlung:

paypal.webp paypal02.webp paypal03.webp paypal04.webp

Auf Lager : 18759

Minimum: 1 Vielfache: 1

Menge

Stückpreis

Ext-Preis

  • 1

    $0.4085

    $0.4085

  • 10

    $0.3021

    $3.021

  • 100

    $0.171285

    $17.1285

  • 500

    $0.113411

    $56.7055

  • 1000

    $0.086954

    $86.954

  • 2000

    $0.07561

    $151.22

  • 5000

    $0.068048

    $340.24

Nicht der Preis, den Sie wollen? Senden Sie jetzt RFQ und wir werden Sie so schnell wie möglich kontaktieren.

Certif02 Certif07 Certif03 Certif04 Certif08 Certif10 Certif09 Certif05 Certif06

Produkt informationen

Parameter-Info

Benutzer handbuch

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 106 pF @ 10 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 1.5 nC @ 4.5 V
Mounting Type Surface Mount
Product Status Active
Rds On (Max) @ Id, Vgs 150mOhm @ 1A, 4.5V
Supplier Device Package X1-DFN1006-3
Vgs(th) (Max) @ Id 1V @ 250µA
Drain to Source Voltage (Vdss) 12 V
Series -
Power Dissipation (Max) 500mW (Ta)
Package / Case 3-UFDFN
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 1.41A (Ta)
Mfr Diodes Incorporated
Vgs (Max) ±6V
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Package Tape & Reel (TR)
Base Product Number DMN1150